Temperature-Dependent Detectivity of Near-Infrared Organic Bulk Heterojunction Photodiodes
Polymers and High Performance Materials
Mathematics and Natural Sciences
Bulk heterojunction photodiodes are fabricated using a new donor–acceptor polymer with a near-infrared absorption edge at 1.2 μm, achieving a detectivity up to 1012 Jones at a wavelength of 1 μm and an excellent linear dynamic range of 86 dB. The photodiode detectivity is maximized by operating at zero bias to suppress dark current, while a thin 175 nm active layer is used to facilitate charge collection without reverse bias. Analysis of the temperature dependence of the dark current and spectral response demonstrates a 2.8-fold increase in detectivity as the temperature was lowered from 44 to −12 °C, a relatively small change when compared to that of inorganic-based devices. The near-infrared photodiode shows a switching speed reaching up to 120 μs without an external bias. An application using our NIR photodiode to detect arterial pulses of a fingertip is demonstrated.
ACS Applied Materials & Interfaces
London, A. E.,
Azoulay, J. D.,
Ng, T. N.
(2016). Temperature-Dependent Detectivity of Near-Infrared Organic Bulk Heterojunction Photodiodes. ACS Applied Materials & Interfaces, 9(2), 1654-1660.
Available at: https://aquila.usm.edu/fac_pubs/16656