N-Type Complementary Semiconducting Polymer Blends

Authors

William W. McNutt, Purdue UniversityFollow
Aristide Gumyusenge, Purdue University
Luke A. Galuska, University of Southern MississippiFollow
Zhiyuan Qian, University of Southern MississippiFollow
Jiazhe He, Purdue University
Xiaodan Gu, University of Southern MississippiFollow
Jianguo Mei, Purdue UniversityFollow

Document Type

Article

Publication Date

6-10-2020

School

Polymer Science and Engineering

Abstract

Complementary semiconducting polymer blends (c-SPBs) have been demonstrated as an effective approach to balance performance and processing of semiconducting polymers for organic field-effect transistors. All previously reported c-SPBs have been exclusively based on p-type polymers. In this report, we designed and synthesized naphthalene diimide (NDI) based matrix polymers and systematically studied n-type charge transport behaviors of their corresponding polymer blends. NDI-C_m (m = 3–7) polymers displayed low melting points (55–105 °C) allowing for the lowest temperature melt-processing of organic transistors to date with mobilities up to 1.01 × 10^–3 cm² V^–1 s^–1. NDI-C_m polymers were revealed to be nearly amorphous by GIXRD and thin film UV–vis which explain the lowered thermal transitions and observed poor charge transport. Utilizing a c-SPB with 5% fully conjugated P(NDI2OD-T2), the transistor performance improved up to 100-fold of the pure matrix polymer despite the low crystallinity of NDI-C_m thin films.

Publication Title

ACS Applied Polymer Materials

Volume

2

Issue

7

First Page

2644

Last Page

2650

Recommended Citation

McNutt, W. W., Gumyusenge, A., Galuska, L. A., Qian, Z., He, J., Gu, X., Mei, J. (2020). N-Type Complementary Semiconducting Polymer Blends. ACS Applied Polymer Materials, 2(7), 2644-2650.
Available at: https://aquila.usm.edu/fac_pubs/18000