N-Type Complementary Semiconducting Polymer Blends
Polymer Science and Engineering
Complementary semiconducting polymer blends (c-SPBs) have been demonstrated as an effective approach to balance performance and processing of semiconducting polymers for organic field-effect transistors. All previously reported c-SPBs have been exclusively based on p-type polymers. In this report, we designed and synthesized naphthalene diimide (NDI) based matrix polymers and systematically studied n-type charge transport behaviors of their corresponding polymer blends. NDI-Cm (m = 3–7) polymers displayed low melting points (55–105 °C) allowing for the lowest temperature melt-processing of organic transistors to date with mobilities up to 1.01 × 10–3 cm2 V–1 s–1. NDI-Cm polymers were revealed to be nearly amorphous by GIXRD and thin film UV–vis which explain the lowered thermal transitions and observed poor charge transport. Utilizing a c-SPB with 5% fully conjugated P(NDI2OD-T2), the transistor performance improved up to 100-fold of the pure matrix polymer despite the low crystallinity of NDI-Cm thin films.
ACS Applied Polymer Materials
McNutt, W. W.,
Galuska, L. A.,
(2020). N-Type Complementary Semiconducting Polymer Blends. ACS Applied Polymer Materials, 2(7), 2644-2650.
Available at: https://aquila.usm.edu/fac_pubs/18000