Title

Correlations Between Higher-Order Rings and Microvoids In Hydrogenated Amorphous Silicon

Document Type

Conference Proceeding

Publication Date

1-1-2015

Department

Physics and Astronomy

School

Mathematics and Natural Sciences

Abstract

In this paper we report the structure of voids in several thousand atom models of hydrogenated amorphous silicon. The models are produced by jointly employing experimental information from Smets and coworkers [1] and first principles simulations [2]. We demonstrate the existence of a useful correlation between the presence of large irreducible rings and the voids in hydrogenated amorphous silicon networks. Molecular hydrogen is observed in the models, and discussed.

Publication Title

Materials Research Society Symposium Proceedings

Volume

1757

Issue

January

First Page

26

Last Page

31

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