Inverse Approach to Atomistic Modeling: Applications To a-Si:H and g-GeSe₂

Authors

Parthapratim Biswas, University of Southern MississippiFollow
D.A. Drabold, Ohio University

Document Type

Article

Publication Date

5-1-2008

Department

Physics and Astronomy

Abstract

We discuss an inverse approach for atomistic modeling of glassy materials. The focus is on structural modeling and electronic properties of hydrogenated amorphous silicon and glassy GeSe2 alloy. The work is based upon a new approach 'experimentally constrained molecular relaxation (ECMR)'. Unlike conventional approaches (such as molecular dynamics (MD) and Monte Carlo simulations(MC), where a potential function is specified and the system evolves either deterministically (MD) or stochastically (MC), we develop a novel scheme to model structural configurations using experimental data in association with density functional calculations. We have applied this approach to model hydrogenated amorphous silicon and glassy GeSe2. The electronic and structural properties of these models are compared with experimental data and models obtained from conventional molecular dynamics simulation. (C) 2008 Elsevier B.V. All rights reserved.

Publication Title

Journal of Non-Crystalline Solids

Volume

354

Issue

19-25

First Page

2697

Last Page

2701

Recommended Citation

Biswas, P., Drabold, D. (2008). Inverse Approach to Atomistic Modeling: Applications To a-Si:H and g-GeSe₂. Journal of Non-Crystalline Solids, 354(19-25), 2697-2701.
Available at: https://aquila.usm.edu/fac_pubs/1520