Document Type

Article

Publication Date

10-22-2015

Department

Physics and Astronomy

School

Mathematics and Natural Sciences

Abstract

Materials with optimized band gap are needed in many specialized applications. In this work, we demonstrate that Hellmann-Feynman forces associated with the gap states can be used to find atomic coordinates that yield desired electronic density of states. Using tight-binding models, we show that this approach may be used to arrive at electronically designed models of amorphous silicon and carbon. We provide a simple recipe to include a priori electronic information in the formation of computer models of materials, and prove that this information may have profound structural consequences. The models are validated with plane-wave density functional calculations.

Publication Title

Scientific Reports

Volume

5

First Page

1

Last Page

7

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