Correlations Between Higher-Order Rings and Microvoids In Hydrogenated Amorphous Silicon
Document Type
Conference Proceeding
Publication Date
1-1-2015
Department
Physics and Astronomy
School
Mathematics and Natural Sciences
Abstract
In this paper we report the structure of voids in several thousand atom models of hydrogenated amorphous silicon. The models are produced by jointly employing experimental information from Smets and coworkers [1] and first principles simulations [2]. We demonstrate the existence of a useful correlation between the presence of large irreducible rings and the voids in hydrogenated amorphous silicon networks. Molecular hydrogen is observed in the models, and discussed.
Publication Title
Materials Research Society Symposium Proceedings
Volume
1757
Issue
January
First Page
26
Last Page
31
Recommended Citation
Biswas, P.,
Drabold, D.
(2015). Correlations Between Higher-Order Rings and Microvoids In Hydrogenated Amorphous Silicon. Materials Research Society Symposium Proceedings, 1757(January), 26-31.
Available at: https://aquila.usm.edu/fac_pubs/18764
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